Research
Innovation in Materials and Devices
Research Area
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Wide Band-gap Materials (SiC, Ga2O3, GaN, ZnO, etc.)
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Energy Efficient Power Semiconductor Devices (Design, Processing, Characterization)
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Power Field-Effect Transistors for Electric Vehicles and Renewable Energy Applications
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Emerging Electronic Materials-Devices-System Integration (Sensors, Memories, IoTs)
Resources
In-House Facilities:
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DLTS (77K~650K), AFM/SKPM, FTIR, Gas-Sensor Meas. Systems
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Probe Station; Multi-channel I-V Measurements
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Semiconductor Parameter Analyzer; Femto- up to 50 A, 3000 V
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Thin Film Deposition/Metallization & Patterning: E-Beam Evaporator, DC-/RF- Sputter, Mask-Aligner, RIE, RTA, High-Temperature Furnace; (~1700 K)
External Resources:
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KNAC, NCNT, NINT, KERI Fab., LG Innotek, etc
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Collaboration with Fraunhofer IISB, Germany, etc.
Funding & Sponsors
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Ministry of Education
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Ministry of Trade, Industry and Energy
- Ministry of Science and ICT
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National Research Foundation
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EU-Korea Collaboration Programme
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KETI, KETEP
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LG, KERI, etc.
Media Interview
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Wide Band-gap Materials-Based Transistors for Energy-Saving Applications in Electric Vehicles and Renewable Resources